Silicene field-effect transistors operating at room temperature

We have reported a silicene field–effect transistor, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room–temperature mobility of about 100 cm2 V–1 s–1 attributed to acoustic phonon–limited transport and grain boundary scattering. These results are enabled by a growth–transfer–fabrication process that we have devised silicene encapsulated delamination with native electrodes. This approach addresses a major challenge for material preservation of silicene during transfer and device fabrication and is applicable to other air–sensitive two–dimensional materials such as germanene and phosphorene. Silicene’s allotropic affinity with bulk silicon and its low-temperature synthesis compared with graphene or alternative two–dimensional semiconductors suggest a more direct integration with ubiquitous semiconductor technology.

Contact person: Alessandro Molle, IMM–CNR Agrate Brianza